| PART |
Description |
Maker |
| BG313007 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BG3123 BG3123R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
| BF1009S |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
| BF5030W |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS AG
|
| BF966SB BF966SA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
|
| S888T |
N?Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
|
Vishay
|
| BF996S BF996SA BF996SB |
N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
|
Vishay Siliconix
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| BF2030 Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
